Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156023
Title: Interlayer excitons in transition metal dichalcogenide semiconductors for 2D optoelectronics
Authors: Liu, Yuanda
Elbanna, Ahmed
Gao, Weibo
Pan, Jisheng
Shen, Zexiang
Teng, Jinghua
Keywords: Science::Physics
Issue Date: 2022
Source: Liu, Y., Elbanna, A., Gao, W., Pan, J., Shen, Z. & Teng, J. (2022). Interlayer excitons in transition metal dichalcogenide semiconductors for 2D optoelectronics. Advanced Materials. https://dx.doi.org/10.1002/adma.202107138
Project: RG195/17
RG156/19 (S)
MOE2016-T3-1-006 (S)
NRF-CRP21-2018-0007
NRF-CRP22-2019-0004
A20E5c0084
A2083c0058
Journal: Advanced Materials
Abstract: Optoelectronic materials that allow on-chip integrated light signal emitting, routing, modulation, and detection are crucial for the development of high-speed and high-throughput optical communication and computing technologies. Interlayer excitons in 2D van der Waals heterostructures, where electrons and holes are bounded by Coulomb interaction but spatially localized in different 2D layers, have recently attracted intense attention for their enticing properties and huge potential in device applications. Here, a general view of these 2D-confined hydrogen-like bosonic particles and the state-of-the-art developments with respect to the frontier concepts and prototypes is presented. Staggered type-II band alignment enables expansion of the interlayer direct bandgap from the intrinsic visible in monolayers up to the near- or even mid-infrared spectrum. Owing to large exciton binding energy, together with ultralong lifetime, room-temperature exciton devices and observation of quantum behaviors are demonstrated. With the rapid advances, it can be anticipated that future studies of interlayer excitons will not only allow the construction of all-exciton information processing circuits but will also continue to enrich the panoply of ideas on quantum phenomena.
URI: https://hdl.handle.net/10356/156023
ISSN: 0935-9648
DOI: 10.1002/adma.202107138
Rights: This is the peer reviewed version of the following article: Liu, Y., Elbanna, A., Gao, W., Pan, J., Shen, Z. & Teng, J. (2022). Interlayer excitons in transition metal dichalcogenide semiconductors for 2D optoelectronics. Advanced Materials, which has been published in final form at https://doi.org/10.1002/adma.202107138. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20221103
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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