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Title: In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
Authors: Loke, Wan Khai
Wang, Yue
Gao, Yu
Khaw, Lina
Lee, Kenneth Eng Kian
Tan, Chuan Seng
Fitzgerald, Eugene A.
Yoon, Soon Fatt
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Loke, W. K., Wang, Y., Gao, Y., Khaw, L., Lee, K. E. K., Tan, C. S., Fitzgerald, E. A. & Yoon, S. F. (2022). In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application. Materials Science in Semiconductor Processing, 146, 106663-.
Project: MOE AcRF Tier-2 T2EP50121-0001 
Journal: Materials Science in Semiconductor Processing 
Abstract: We report an In0.3Ga0.7As HBT device grown on a 200 mm Si wafer using GeSi as virtual starting substrate and InAlAs as the compositionally graded buffer layer from GaAs to In0.3Ga0.7As lattice constant. A DC gain, emitter-base, and base-collector ideality factors of 10, 1.43, and 1.56, respectively, are obtained for a device with an emitter area of 40×50µm2. Small-signal simulation of an In0.3Ga0.7As HBT device with 2x8 µm2 emitter area shows that current gain cutoff frequency (fT) and maximum cut-off frequency (fMax), of 50 GHz and 220 GHz, respectively, can be achieved with base doping and layer thickness of 2×1018cm-3 and 30 nm, respectively.
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2022.106663
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 Elsevier Ltd. All rights reserved. This paper was published in Materials Science in Semiconductor Processing and is made available with permission of Elsevier Ltd.
Fulltext Permission: embargo_20240808
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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