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Title: Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states
Authors: Deng, Ya
Li, Peiling
Zhu, Chao
Zhou, Jiadong
Wang, Xiaowei
Cui, Jian
Yang, Xue
Tao, Li
Zeng, Qingsheng
Duan, Ruihuan
Fu, Qundong
Zhu, Chao
Xu, Jianbin
Qu, Fanming
Yang, Changli
Jing, Xiunian
Lu, Li
Liu, Guangtong
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2021
Source: Deng, Y., Li, P., Zhu, C., Zhou, J., Wang, X., Cui, J., Yang, X., Tao, L., Zeng, Q., Duan, R., Fu, Q., Zhu, C., Xu, J., Qu, F., Yang, C., Jing, X., Lu, L., Liu, G. & Liu, Z. (2021). Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states. ACS Nano, 15(7), 11526-11534.
Project: MOE2018-T3-1-002
Journal: ACS Nano 
Abstract: Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1–xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1–xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1–xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1–xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.
ISSN: 1936-0851
DOI: 10.1021/acsnano.1c01441
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: embargo_20220804
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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