Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156073
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dc.contributor.authorDeng, Yaen_US
dc.contributor.authorLi, Peilingen_US
dc.contributor.authorZhu, Chaoen_US
dc.contributor.authorZhou, Jiadongen_US
dc.contributor.authorWang, Xiaoweien_US
dc.contributor.authorCui, Jianen_US
dc.contributor.authorYang, Xueen_US
dc.contributor.authorTao, Lien_US
dc.contributor.authorZeng, Qingshengen_US
dc.contributor.authorDuan, Ruihuanen_US
dc.contributor.authorFu, Qundongen_US
dc.contributor.authorZhu, Chaoen_US
dc.contributor.authorXu, Jianbinen_US
dc.contributor.authorQu, Fanmingen_US
dc.contributor.authorYang, Changlien_US
dc.contributor.authorJing, Xiunianen_US
dc.contributor.authorLu, Lien_US
dc.contributor.authorLiu, Guangtongen_US
dc.contributor.authorLiu, Zhengen_US
dc.date.accessioned2022-04-11T06:35:44Z-
dc.date.available2022-04-11T06:35:44Z-
dc.date.issued2021-
dc.identifier.citationDeng, Y., Li, P., Zhu, C., Zhou, J., Wang, X., Cui, J., Yang, X., Tao, L., Zeng, Q., Duan, R., Fu, Q., Zhu, C., Xu, J., Qu, F., Yang, C., Jing, X., Lu, L., Liu, G. & Liu, Z. (2021). Controlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum states. ACS Nano, 15(7), 11526-11534. https://dx.doi.org/10.1021/acsnano.1c01441en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttps://hdl.handle.net/10356/156073-
dc.description.abstractRecently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1–xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1–xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1–xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1–xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationMOE2018-T3-1-002en_US
dc.relation.ispartofACS Nanoen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.1c01441.en_US
dc.subjectEngineering::Materialsen_US
dc.titleControlled synthesis of MoₓW₁₋ₓTe₂ atomic layers with emergent quantum statesen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1021/acsnano.1c01441-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.issue7en_US
dc.identifier.volume15en_US
dc.identifier.spage11526en_US
dc.identifier.epage11534en_US
dc.subject.keywordsTransition Metal Dichalcogenidesen_US
dc.subject.keywordsChemical Vapor Depositionen_US
dc.description.acknowledgementZ.L. acknowledges support from the Singapore Ministry of Education AcRF Tier 3 Programme “Geometrical Quantum Materials” (MOE2018-T3-1-002). G.L. acknowledges support from the National Basic Research Program of China from the MOST (2016YFA0300601), the National Natural Science Foundation of China (11527806, 11874406 and 92065203), the Beijing Municipal Science & Technology Commission of China (Z191100007219008), the Beijing Academy of Quantum Information Sciences (Y18G08), the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB33010300), and the Synergic Extreme Condition User Facility.en_US
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