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Title: Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc
Authors: Nair, Govindan Kutty Rajendran
Zhang, Zhaowei
Hou, Fuchen
Abdelaziem, Ali
Xu, Xiaodong
Yang, Steve Wu Qing
Zhang, Nan
Li, Weiqi
Zhu, Chao
Wu, Yao
Heng, Weiling
Kang, Lixing
Salim, Teddy
Zhou, Jiadong
Ke, Lin
Lin, Junhao
Li, Xingji
Gao, Weibo
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2022
Source: Nair, G. K. R., Zhang, Z., Hou, F., Abdelaziem, A., Xu, X., Yang, S. W. Q., Zhang, N., Li, W., Zhu, C., Wu, Y., Heng, W., Kang, L., Salim, T., Zhou, J., Ke, L., Lin, J., Li, X., Gao, W. & Liu, Z. (2022). Phase-pure two-dimensional FeₓGeTe₂ magnets with near-room-temperature Tc. Nano Research, 15(1), 457-464.
Project: NRF-CRP22-2019-0007
NRF-CRP22- 2019-0004
Journal: Nano Research
Abstract: Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FexGeTe2 ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FexGeTe2. As a result, high-quality Fe3GeTe2 and Fe5GeTe2 flakes have been grown selectively using the CS-CVD technique. Curie temperature (TC) of the as-grown FexGeTe2 can be up to ∼ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the Fe5GeTe2 reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on Fe5GeTe2 display the highest conductivity among other FexGeTe2 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices. [Figure not available: see fulltext.].
ISSN: 1998-0124
DOI: 10.1007/s12274-021-3502-0
Rights: © 2021 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature. All rights reserved. This paper was published in Nano Research and is made available with permission of Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.
Fulltext Permission: embargo_20230207
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
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