Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156145
Title: Superconductivity in semiconductor structures : the excitonic mechanism
Authors: Cherotchenko, E. D.
Espinosa-Ortega, Tania
Nalitov, A. V.
Shelykh, I. A.
Kavokin, A. V.
Keywords: Science::Physics::Optics and light
Issue Date: 2016
Source: Cherotchenko, E. D., Espinosa-Ortega, T., Nalitov, A. V., Shelykh, I. A. & Kavokin, A. V. (2016). Superconductivity in semiconductor structures : the excitonic mechanism. Superlattices and Microstructures, 90, 170-175. https://dx.doi.org/10.1016/j.spmi.2015.12.003
Journal: Superlattices and Microstructures
Abstract: We theoretically study the dependency of the superconductivity transition critical temperature (TC) on the electron and exciton-polariton densities in layered systems, where superconductivity is mediated by a Bose-Einstein condensate of exciton-polaritons. The critical temperature increases with the polariton density, but decreases with the electron gas density, surprisingly. This makes doped semiconductor structures with shallow Fermi energies better adapted for observation of the exciton-polariton-induced superconductivity than metallic layers. For realistic GaAs-based microcavities containing doped and neutral quantum wells we estimate TC as close to 50 K. Superconductivity is suppressed by magnetic fields of the order of 4 T due to the Fermi surface renormalization.
URI: https://hdl.handle.net/10356/156145
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2015.12.003
Rights: © 2015 Elsevier Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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