Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156145
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dc.contributor.authorCherotchenko, E. D.en_US
dc.contributor.authorEspinosa-Ortega, Taniaen_US
dc.contributor.authorNalitov, A. V.en_US
dc.contributor.authorShelykh, I. A.en_US
dc.contributor.authorKavokin, A. V.en_US
dc.date.accessioned2022-04-07T07:01:32Z-
dc.date.available2022-04-07T07:01:32Z-
dc.date.issued2016-
dc.identifier.citationCherotchenko, E. D., Espinosa-Ortega, T., Nalitov, A. V., Shelykh, I. A. & Kavokin, A. V. (2016). Superconductivity in semiconductor structures : the excitonic mechanism. Superlattices and Microstructures, 90, 170-175. https://dx.doi.org/10.1016/j.spmi.2015.12.003en_US
dc.identifier.issn0749-6036en_US
dc.identifier.urihttps://hdl.handle.net/10356/156145-
dc.description.abstractWe theoretically study the dependency of the superconductivity transition critical temperature (TC) on the electron and exciton-polariton densities in layered systems, where superconductivity is mediated by a Bose-Einstein condensate of exciton-polaritons. The critical temperature increases with the polariton density, but decreases with the electron gas density, surprisingly. This makes doped semiconductor structures with shallow Fermi energies better adapted for observation of the exciton-polariton-induced superconductivity than metallic layers. For realistic GaAs-based microcavities containing doped and neutral quantum wells we estimate TC as close to 50 K. Superconductivity is suppressed by magnetic fields of the order of 4 T due to the Fermi surface renormalization.en_US
dc.language.isoenen_US
dc.relation.ispartofSuperlattices and Microstructuresen_US
dc.rights© 2015 Elsevier Ltd. All rights reserved.en_US
dc.subjectScience::Physics::Optics and lighten_US
dc.titleSuperconductivity in semiconductor structures : the excitonic mechanismen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doi10.1016/j.spmi.2015.12.003-
dc.identifier.scopus2-s2.0-84951336325-
dc.identifier.volume90en_US
dc.identifier.spage170en_US
dc.identifier.epage175en_US
dc.subject.keywords2D Semiconductorsen_US
dc.subject.keywordsExcitonsen_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
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