Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156200
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dc.contributor.authorKumar, Durgeshen_US
dc.contributor.authorChan, Jianpengen_US
dc.contributor.authorPiramanayagam, S. N.en_US
dc.date.accessioned2022-04-11T07:56:21Z-
dc.date.available2022-04-11T07:56:21Z-
dc.date.issued2021-
dc.identifier.citationKumar, D., Chan, J. & Piramanayagam, S. N. (2021). Domain wall pinning through nanoscale interfacial Dzyaloshinskii-Moriya interaction. Journal of Applied Physics, 130(21), 213901-. https://dx.doi.org/10.1063/5.0070773en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttps://hdl.handle.net/10356/156200-
dc.description.abstractNeuromorphic computing (NC) has been gaining attention as a potential candidate for artificial intelligence. The building blocks for NC are neurons and synapses. Research studies have indicated that domain wall (DW) devices are one of the most energy-efficient contenders for realizing NC. Moreover, synaptic functions can be achieved by obtaining multi-resistance states in DW devices. However, in DW devices with no artificial pinning, it is difficult to control the DW position, and hence achieving multilevel resistance is difficult. Here, we have proposed the concept of nanoscale interfacial Dzyaloshinskii-Moriya interaction (iDMI) for controllably stopping the DWs at specific positions, and hence, realizing multi-resistance states. We show that the nanoscale iDMI forms an energy barrier (well), which can controllably pin the DWs at the pinning sites. Moreover, a tunable depinning current density was achieved by changing the width and iDMI constant of the confinement region. We have also studied pinning in a device with five successive pinning sites. This feature is a proof-of-concept for realizing multi-resistance states in the proposed concept. Based on these observations, a magnetic tunnel junction - where the free layer is made up of the proposed concept - can be fabricated to achieve synapses for NC applications.en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationNRF-CRP21-2018-003en_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rights© 2021 Author(s). All rights reserved. This paper was published in Journal of Applied Physics and is made available with permission of Author(s).en_US
dc.subjectScience::Physicsen_US
dc.titleDomain wall pinning through nanoscale interfacial Dzyaloshinskii-Moriya interactionen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doi10.1063/5.0070773-
dc.description.versionPublished versionen_US
dc.identifier.scopus2-s2.0-85120736861-
dc.identifier.issue21en_US
dc.identifier.volume130en_US
dc.identifier.spage213901en_US
dc.subject.keywordsMagnetic Domain Wallsen_US
dc.subject.keywordsDomain Wall Devicesen_US
dc.subject.keywordsDomain Wall Physicsen_US
dc.subject.keywordsNeuromorphic Computingen_US
dc.subject.keywordsSpin-Transfer Torqueen_US
dc.description.acknowledgementThe authors gratefully acknowledge the National Research Foundation, Singapore CRP Grant (CRP Grant No. NRF-CRP21-2018-003). D.K. also acknowledges the financial support from the NTU research scholarship. S. N. Piramanayagam is a member of SG-SPIN, Singapore.en_US
item.grantfulltextembargo_20221210-
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