Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156208
Title: Radiation hardened RISC-V processor
Authors: Gu, Haoteng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Gu, H. (2022). Radiation hardened RISC-V processor. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156208
Abstract: This thesis focuses on designing and validating an open-source 32-bit RISC-V processor and implementing using NTU’s in-house RHBD cell library. We inves tigate, analyse and compare the final layout in timing, area, and power based on three different libraries: (a) Full triple-module-redundancy (TMR) technique using the GF 65nm library (b) DICE library (c) NTU’s in-house library The results show that the RHBD RISC-V design using NTU’s in-house library passes functional tests at 250MHz, and can run higher if a faster SRAM is used. This suggests that NTU’s in-house library is applicable for high-speed applica tions. The results also show that the implementation using our in-house library is about 33% smaller than the implementation using DICE and about 60% smaller than the implementation applying full TMR using the GF 65nm library. In terms of power consumption, the implementation using our in-house library is almost equal to the implementation using the DICE library and 30% smaller than the implementation applying full TMR in the worst case. Overall, in the implementation of the RHBD RISC-V processor, we conclude that the application of NTU’s in-house RHBD library is superior to reported RHBD methodologies, including DICE and TMR.
URI: https://hdl.handle.net/10356/156208
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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