Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156208
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dc.contributor.authorGu, Haotengen_US
dc.date.accessioned2022-04-07T01:20:56Z-
dc.date.available2022-04-07T01:20:56Z-
dc.date.issued2022-
dc.identifier.citationGu, H. (2022). Radiation hardened RISC-V processor. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156208en_US
dc.identifier.urihttps://hdl.handle.net/10356/156208-
dc.description.abstractThis thesis focuses on designing and validating an open-source 32-bit RISC-V processor and implementing using NTU’s in-house RHBD cell library. We inves tigate, analyse and compare the final layout in timing, area, and power based on three different libraries: (a) Full triple-module-redundancy (TMR) technique using the GF 65nm library (b) DICE library (c) NTU’s in-house library The results show that the RHBD RISC-V design using NTU’s in-house library passes functional tests at 250MHz, and can run higher if a faster SRAM is used. This suggests that NTU’s in-house library is applicable for high-speed applica tions. The results also show that the implementation using our in-house library is about 33% smaller than the implementation using DICE and about 60% smaller than the implementation applying full TMR using the GF 65nm library. In terms of power consumption, the implementation using our in-house library is almost equal to the implementation using the DICE library and 30% smaller than the implementation applying full TMR in the worst case. Overall, in the implementation of the RHBD RISC-V processor, we conclude that the application of NTU’s in-house RHBD library is superior to reported RHBD methodologies, including DICE and TMR.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleRadiation hardened RISC-V processoren_US
dc.typeThesis-Master by Courseworken_US
dc.contributor.supervisorChang Josephen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Integrated Circuit Design)en_US
dc.contributor.supervisoremailEJSCHANG@ntu.edu.sgen_US
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