Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156216
Title: Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform for 2 m applications
Authors: Son, Bongkwon
Lin, Yiding
Lee, Kwang Hong
Margetis, Joe
Kohen, David
Tolle, John
Tan, Chuan Seng
Keywords: Engineering
Issue Date: 2022
Source: Son, B., Lin, Y., Lee, K. H., Margetis, J., Kohen, D., Tolle, J. & Tan, C. S. (2022). Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform for 2 m applications. IEEE Photonics Journal. https://dx.doi.org/10.1109/JPHOT.2022.3164943
Journal: IEEE Photonics Journal
Abstract: In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at wavelengths of 1,600 and 2,003 nm, respectively. Through a systematic study, it is revealed that the photodetectors can potentially detect the wavelength beyond 2,200 nm. The dark current density was measured to be 4.6 A/cm2 for GeSnOI waveguide-shaped photodetectors. The 3dB bandwidth was observed to be 1.26 and 0.81 GHz at 1,550 and 2,000 nm wavelengths, respectively. This work opens up an opportunity for low-cost 2 µm wavelength photodetection on the GeSn/Ge interface-free GeSnOI platform.
URI: https://hdl.handle.net/10356/156216
ISSN: 1943-0655
DOI: 10.1109/JPHOT.2022.3164943
Rights: © 2022 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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