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https://hdl.handle.net/10356/156291| Title: | Printed metal oxide systems for high mobility thin film transistors | Authors: | Chua, Ran Zhi Tong | Keywords: | Engineering::Materials | Issue Date: | 2022 | Publisher: | Nanyang Technological University | Source: | Chua, R. Z. T. (2022). Printed metal oxide systems for high mobility thin film transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156291 | Abstract: | The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufacturability, good mobility, and compatibility with flexible substrates | URI: | https://hdl.handle.net/10356/156291 | Schools: | School of Materials Science and Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | MSE Student Reports (FYP/IA/PA/PI) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| FYP Report AY2021-2022_Chua Zhi Tong Ran.pdf Restricted Access | 1.39 MB | Adobe PDF | View/Open |
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