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Title: Printed metal oxide systems for high mobility thin film transistors
Authors: Chua, Ran Zhi Tong
Keywords: Engineering::Materials
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Chua, R. Z. T. (2022). Printed metal oxide systems for high mobility thin film transistors. Final Year Project (FYP), Nanyang Technological University, Singapore.
Abstract: The primary aim of the project was the utilization of a direct printing system to fabricate metal oxide systems for thin film transistor (TFT) application. Metal oxide systems such as In2O3 and IZO were used due to excellent properties such as high transparency, low cost, high throughput manufacturability, good mobility, and compatibility with flexible substrates
Schools: School of Materials Science and Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

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