Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156311
Title: Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
Authors: Wong, Yi Jing
Keywords: Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Wong, Y. J. (2022). Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156311
Project: MSE/21/112 
Abstract: This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results.
URI: https://hdl.handle.net/10356/156311
Schools: School of Materials Science and Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

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