Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156311
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dc.contributor.authorWong, Yi Jingen_US
dc.date.accessioned2022-04-24T13:36:00Z-
dc.date.available2022-04-24T13:36:00Z-
dc.date.issued2022-
dc.identifier.citationWong, Y. J. (2022). Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156311en_US
dc.identifier.urihttps://hdl.handle.net/10356/156311-
dc.description.abstractThis report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.relationMSE/21/112en_US
dc.subjectEngineering::Materials::Microelectronics and semiconductor materialsen_US
dc.titleSimulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applicationsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorRadhakrishnan Ken_US
dc.contributor.supervisorRaju V. Ramanujanen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.degreeBachelor of Engineering (Materials Engineering)en_US
dc.contributor.supervisoremailRamanujan@ntu.edu.sg, ERADHA@ntu.edu.sgen_US
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Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)
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