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https://hdl.handle.net/10356/156311| Title: | Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications | Authors: | Wong, Yi Jing | Keywords: | Engineering::Materials::Microelectronics and semiconductor materials | Issue Date: | 2022 | Publisher: | Nanyang Technological University | Source: | Wong, Y. J. (2022). Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156311 | Project: | MSE/21/112 | Abstract: | This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results. | URI: | https://hdl.handle.net/10356/156311 | Schools: | School of Materials Science and Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | MSE Student Reports (FYP/IA/PA/PI) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| Wong, Y.J. (2022) Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications..pdf Restricted Access | 2.52 MB | Adobe PDF | View/Open |
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