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Title: Layer Hall effect in a 2D topological axion antiferromagnet
Authors: Gao, Anyuan
Liu, Yu-Fei
Hu, Chaowei
Qiu, Jian-Xiang
Tzschaschel, Christian
Ghosh, Barun
Ho, Sheng-Chin
Bérubé, Damien
Chen, Rui
Sun, Haipeng
Zhang, Zhaowei
Zhang, Xin-Yue
Wang, Yu-Xuan
Wang, Naizhou
Huang, Zumeng
Felser, Claudia
Agarwal, Amit
Ding, Thomas
Tien, Hung-Ju
Akey, Austin
Gardener, Jules
Singh, Bahadur
Watanabe, Kenji
Taniguchi, Takashi
Burch, Kenneth S.
Bell, David C.
Zhou, Brian B.
Gao, Weibo
Lu, Hai-Zhou
Bansil, Arun
Lin, Hsin
Chang, Tay-Rong
Fu, Liang
Ma, Qiong
Ni, Ni
Xu, Su-Yang
Keywords: Science::Physics
Issue Date: 2021
Source: Gao, A., Liu, Y., Hu, C., Qiu, J., Tzschaschel, C., Ghosh, B., Ho, S., Bérubé, D., Chen, R., Sun, H., Zhang, Z., Zhang, X., Wang, Y., Wang, N., Huang, Z., Felser, C., Agarwal, A., Ding, T., Tien, H., ...Xu, S. (2021). Layer Hall effect in a 2D topological axion antiferromagnet. Nature, 595, 521-525.
Project: NRF-CRP21-2018-0007
Journal: Nature
Abstract: Whereas ferromagnets have been known and used for millennia, antiferromagnets were only discovered in the 1930s1. At large scale, because of the absence of global magnetization, antiferromagnets may seem to behave like any non-magnetic material. At the microscopic level, however, the opposite alignment of spins forms a rich internal structure. In topological antiferromagnets, this internal structure leads to the possibility that the property known as the Berry phase can acquire distinct spatial textures2,3. Here we study this possibility in an antiferromagnetic axion insulator-even-layered, two-dimensional MnBi2Te4-in which spatial degrees of freedom correspond to different layers. We observe a type of Hall effect-the layer Hall effect-in which electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under zero electric field, even-layered MnBi2Te4 shows no anomalous Hall effect. However, applying an electric field leads to the emergence of a large, layer-polarized anomalous Hall effect of about 0.5e2/h (where e is the electron charge and h is Planck's constant). This layer Hall effect uncovers an unusual layer-locked Berry curvature, which serves to characterize the axion insulator state. Moreover, we find that the layer-locked Berry curvature can be manipulated by the axion field formed from the dot product of the electric and magnetic field vectors. Our results offer new pathways to detect and manipulate the internal spatial structure of fully compensated topological antiferromagnets4-9. The layer-locked Berry curvature represents a first step towards spatial engineering of the Berry phase through effects such as layer-specific moiré potential.
ISSN: 0028-0836
DOI: 10.1038/s41586-021-03679-w
Schools: School of Physical and Mathematical Sciences 
Rights: © 2021 The Author(s), under exclusive licence to Springer Nature Limited. All rights reserved. This paper was published in Nature and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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