Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156372
Title: Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
Authors: Kang, Yuye
Xu, Shengqiang
Han, Kaizhen
Kong, Eugene Y.-J.
Song, Zhigang
Luo, Sheng
Kumar, Annie
Wang, Chengkuan
Fan, Weijun
Liang, Gengchiau
Gong, Xiao
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Kang, Y., Xu, S., Han, K., Kong, E. Y., Song, Z., Luo, S., Kumar, A., Wang, C., Fan, W., Liang, G. & Gong, X. (2021). Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width. Nano Letters, 21(13), 5555-5563. https://dx.doi.org/10.1021/acs.nanolett.1c00934
Project: NRF-CRP19-2017-01
Journal: Nano Letters
Abstract: We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes.
URI: https://hdl.handle.net/10356/156372
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.1c00934
Rights: © 2021 American Chemical Society. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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