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Title: Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor
Authors: Lai, Shen
Liu, Huiying
Zhang, Zhaowei
Zhao, Jianzhou
Feng, Xiaolong
Wang, Naizhou
Tang, Chaolong
Liu, Yuanda
Novoselov, K. S.
Yang, Shengyuan A.
Gao, Weibo
Keywords: Science::Physics
Issue Date: 2021
Source: Lai, S., Liu, H., Zhang, Z., Zhao, J., Feng, X., Wang, N., Tang, C., Liu, Y., Novoselov, K. S., Yang, S. A. & Gao, W. (2021). Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor. Nature Nanotechnology, 16(8), 869-873.
Project: NRF-CRP21-2018-0007
MOE2016-T3-1-006 (S)
Journal: Nature Nanotechnology
Abstract: Nonlinear responses in transport measurements are linked to material properties not accessible at linear order1 because they follow distinct symmetry requirements2-5. While the linear Hall effect indicates time-reversal symmetry breaking, the second-order nonlinear Hall effect typically requires broken inversion symmetry1. Recent experiments on ultrathin WTe2 demonstrated this connection between crystal structure and nonlinear response6,7. The observed second-order nonlinear Hall effect can probe the Berry curvature dipole, a band geometric property, in non-magnetic materials, just like the anomalous Hall effect probes the Berry curvature in magnetic materials8,9. Theory predicts that another intrinsic band geometric property, the Berry-connection polarizability tensor10, gives rise to higher-order signals, but it has not been probed experimentally. Here, we report a third-order nonlinear Hall effect in thick Td-MoTe2 samples. The third-order signal is found to be the dominant response over both the linear- and second-order ones. Angle-resolved measurements reveal that this feature results from crystal symmetry constraints. Temperature-dependent measurement shows that the third-order Hall response agrees with the Berry-connection polarizability contribution evaluated by first-principles calculations. The third-order nonlinear Hall effect provides a valuable probe for intriguing material properties that are not accessible at lower orders and may be employed for high-order-response electronic devices.
ISSN: 1748-3387
DOI: 10.1038/s41565-021-00917-0
Schools: School of Physical and Mathematical Sciences 
Research Centres: Centre for Disruptive Photonic Technologies (CDPT) 
The Photonics Institute 
Rights: © 2021 The Author(s), under exclusive licence to Springer Nature Limited. All rights reserved. This paper was published in Nature Nanotechnology and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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