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|Title:||Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor||Authors:||Lai, Shen
Novoselov, K. S.
Yang, Shengyuan A.
|Keywords:||Science::Physics||Issue Date:||2021||Source:||Lai, S., Liu, H., Zhang, Z., Zhao, J., Feng, X., Wang, N., Tang, C., Liu, Y., Novoselov, K. S., Yang, S. A. & Gao, W. (2021). Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor. Nature Nanotechnology, 16(8), 869-873. https://dx.doi.org/10.1038/s41565-021-00917-0||Project:||NRF-CRP21-2018-0007
|Journal:||Nature Nanotechnology||Abstract:||Nonlinear responses in transport measurements are linked to material properties not accessible at linear order1 because they follow distinct symmetry requirements2-5. While the linear Hall effect indicates time-reversal symmetry breaking, the second-order nonlinear Hall effect typically requires broken inversion symmetry1. Recent experiments on ultrathin WTe2 demonstrated this connection between crystal structure and nonlinear response6,7. The observed second-order nonlinear Hall effect can probe the Berry curvature dipole, a band geometric property, in non-magnetic materials, just like the anomalous Hall effect probes the Berry curvature in magnetic materials8,9. Theory predicts that another intrinsic band geometric property, the Berry-connection polarizability tensor10, gives rise to higher-order signals, but it has not been probed experimentally. Here, we report a third-order nonlinear Hall effect in thick Td-MoTe2 samples. The third-order signal is found to be the dominant response over both the linear- and second-order ones. Angle-resolved measurements reveal that this feature results from crystal symmetry constraints. Temperature-dependent measurement shows that the third-order Hall response agrees with the Berry-connection polarizability contribution evaluated by first-principles calculations. The third-order nonlinear Hall effect provides a valuable probe for intriguing material properties that are not accessible at lower orders and may be employed for high-order-response electronic devices.||URI:||https://hdl.handle.net/10356/156378||ISSN:||1748-3387||DOI:||10.1038/s41565-021-00917-0||Schools:||School of Physical and Mathematical Sciences||Research Centres:||Centre for Disruptive Photonic Technologies (CDPT)
The Photonics Institute
|Rights:||© 2021 The Author(s), under exclusive licence to Springer Nature Limited. All rights reserved. This paper was published in Nature Nanotechnology and is made available with permission of The Author(s).||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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