Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156381
Title: Enhanced GeSn microdisk lasers directly released on Si
Authors: Kim, Youngmin
Assali, Simone
Burt, Daniel
Jung, Yongduck
Joo, Hyo-Jun
Chen, Melvina
Ikonic, Zoran
Moutanabbir, Oussama
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2022
Source: Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H., Chen, M., Ikonic, Z., Moutanabbir, O. & Nam, D. (2022). Enhanced GeSn microdisk lasers directly released on Si. Advanced Optical Materials, 10(2), 2101213-. https://dx.doi.org/10.1002/adom.202101213
Project: 2019-T1-002-050 (RG148/19 (S))
MOE2018-T2-2-011 (S)
NRF-CRP19-2017-01
NRF2018-NRF-ANR009 TIGER
A2083c0053
Journal: Advanced Optical Materials
Abstract: GeSn alloys are promising candidates for complementary metal-oxide- semiconductor-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that is thus far introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein is demonstrated that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in the device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ≈40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si.
URI: https://hdl.handle.net/10356/156381
ISSN: 2195-1071
DOI: 10.1002/adom.202101213
Rights: © 2021 Wiley-VCH GmbH. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Page view(s)

56
Updated on May 27, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.