Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156408
Title: 1D photonic crystal direct bandgap GeSn-on- insulator laser
Authors: Joo, Hyo-Jun
Kim, Youngmin
Burt, Daniel
Jung, Yongduck
Zhang, Lin
Chen, Melvina
Parluhutan, Samue Jior
Kang, Dong-Ho
Lee, Chulwon
Assali, Simone
Ikonic, Zoran
Moutanabbir, Oussama
Cho, Yong-Hoon
Tan, Chuan Seng
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2021
Source: Joo, H., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y., Tan, C. S. & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on- insulator laser. Applied Physics Letters, 119(20), 201101-. https://dx.doi.org/10.1063/5.0066935
Project: 2019-T1- 002-050 [RG 148/19 (S)] 
MOE2018-T2-2-011 (S) 
NRF-CRP19- 2017-01 
NRF2018-NRF-ANR009 TIGER 
A2083c0053 
Journal: Applied Physics Letters 
Abstract: GeSn alloys have been regarded as a potential lasing material for a complementary metal–oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal nanobeam with a very small device footprint of 7 lm2 and a compact active area of 1.2 lm2 on a high-quality GeSn-on-insulator substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is 18.2 kW cm2 at 4 K, which is significantly lower than that of the unreleased nanobeam laser (38.4 kW cm2 at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows quenching of lasing at a temperature of 70 K. Our demonstration offers an avenue toward developing practical group-IV light sources with high-density integration and low power consumption.
URI: https://hdl.handle.net/10356/156408
ISSN: 0003-6951
DOI: 10.1063/5.0066935
Rights: © 2021 Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of Author(s).
Fulltext Permission: embargo_20221123
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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