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Title: Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
Authors: Burt, Daniel
Joo, Hyo-Jun
Jung, Yongduck
Kim, Youngmin
Chen, Melvina
Huang, Yi-Chiau
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2021
Source: Burt, D., Joo, H., Jung, Y., Kim, Y., Chen, M., Huang, Y. & Nam, D. (2021). Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks. Optics Express, 29(18), 28959-28967.
Project: A2083c0053
2019-T1-002-050 (RG 148/19 (S)
MOE2018-T2-2-011 (S)
Journal: Optics Express
Abstract: GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which improves the directness. Another popular approach is to use a low to moderate Sn content with either compressive strain relaxation or tensile strain engineering, but these strain engineering techniques generally require optical cavities to be suspended in air, which leads to poor thermal management. In this work, we develop a novel dual insulator GeSn-on-insulator (GeSnOI) material platform that is used to produce strain-relaxed GeSn microdisks stuck on a substrate. By undercutting only one insulating layer (i.e., Al2O3), we fabricate microdisks sitting on SiO2, which attain three key properties for a high-performance GeSn laser: removal of harmful compressive strain, decent thermal management, and excellent optical confinement. We believe that an increase in the Sn content of GeSn layers on our platform can allow us to achieve improved lasing performance.
ISSN: 1094-4087
DOI: 10.1364/OE.426321
Schools: School of Electrical and Electronic Engineering 
Rights: © 2021 Optical Society of America under the terms of the Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for noncommercial purposes and appropriate attribution is maintained. All other rights are reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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