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|Title:||Enhanced electric resistivity and dielectric energy storage by vacancy defect complex||Authors:||Pan, Hao
Wang, Renshaw Xiao
MacManus-Driscoll, Judith L.
|Keywords:||Science::Physics||Issue Date:||2021||Source:||Pan, H., Feng, N., Xu, X., Li, W., Zhang, Q., Lan, S., Liu, Y., Sha, H., Bi, K., Xu, B., Ma, J., Gu, L., Yu, R., Shen, Y., Wang, R. X., MacManus-Driscoll, J. L., Chen, C., Nan, C. & Lin, Y. (2021). Enhanced electric resistivity and dielectric energy storage by vacancy defect complex. Energy Storage Materials, 42, 836-844. https://dx.doi.org/10.1016/j.ensm.2021.08.027||Project:||NRF-CRP21–2018–0003||Journal:||Energy Storage Materials||Abstract:||The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress de- fects, a new approach, i.e. , constructing defects with deeper energy levels, is demonstrated to address the inferior resistivity of BiFeO 3 -based dielectric films. Deep-level vacancy complexes with high charge carrier activation energies are realized via deliberate incorporation of oxygen vacancies and bismuth vacancies in low-oxygen- pressure deposited films. This method dramatically increases the resistivity by ∼4 orders of magnitude and the breakdown strength by ∼150%, leading to a ∼460% enhancement of energy density (from 14 to 79 J cm − 3 ), as well as improved efficiency and performance reliability. This work reveals the significance of rational design and precise control of defects for high-performance dielectric energy storage. The deep-level vacancy complex approach is generalizable to wide ranges of dielectric systems and functional applications.||URI:||https://hdl.handle.net/10356/156689||ISSN:||2405-8297||DOI:||10.1016/j.ensm.2021.08.027||Rights:||© 2021 Elsevier B.V. All rights reserved. This paper was published in Energy Storage Materials and is made available with permission of Elsevier B.V.||Fulltext Permission:||embargo_20231207||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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|ENSM Revised Manuscript_HaoPAN-XRW v2.pdf|
|1.14 MB||Adobe PDF||Under embargo until Dec 07, 2023|
Updated on May 19, 2022
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