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Title: Enhanced electric resistivity and dielectric energy storage by vacancy defect complex
Authors: Pan, Hao
Feng, Nan
Xu, Xing
Li, Weiwei
Zhang, Qinghua
Lan, Shun
Liu, Yi-Qian
Sha, Haozhi
Bi, Ke
Xu, Ben
Ma, Jing
Gu, Lin
Yu, Rong
Shen, Yang
Wang, Renshaw Xiao
MacManus-Driscoll, Judith L.
Chen, Chong-Lin
Nan, Ce-Wen
Lin, Yuan-Hua
Keywords: Science::Physics
Issue Date: 2021
Source: Pan, H., Feng, N., Xu, X., Li, W., Zhang, Q., Lan, S., Liu, Y., Sha, H., Bi, K., Xu, B., Ma, J., Gu, L., Yu, R., Shen, Y., Wang, R. X., MacManus-Driscoll, J. L., Chen, C., Nan, C. & Lin, Y. (2021). Enhanced electric resistivity and dielectric energy storage by vacancy defect complex. Energy Storage Materials, 42, 836-844.
Project: NRF-CRP21–2018–0003
Journal: Energy Storage Materials
Abstract: The presence of uncontrolled defects is a longstanding challenge for achieving high electric resistivity and high energy storage density in dielectric capacitors. In this study, opposite to conventional strategies to suppress de- fects, a new approach, i.e. , constructing defects with deeper energy levels, is demonstrated to address the inferior resistivity of BiFeO 3 -based dielectric films. Deep-level vacancy complexes with high charge carrier activation energies are realized via deliberate incorporation of oxygen vacancies and bismuth vacancies in low-oxygen- pressure deposited films. This method dramatically increases the resistivity by ∼4 orders of magnitude and the breakdown strength by ∼150%, leading to a ∼460% enhancement of energy density (from 14 to 79 J cm − 3 ), as well as improved efficiency and performance reliability. This work reveals the significance of rational design and precise control of defects for high-performance dielectric energy storage. The deep-level vacancy complex approach is generalizable to wide ranges of dielectric systems and functional applications.
ISSN: 2405-8297
DOI: 10.1016/j.ensm.2021.08.027
Rights: © 2021 Elsevier B.V. All rights reserved. This paper was published in Energy Storage Materials and is made available with permission of Elsevier B.V.
Fulltext Permission: embargo_20231207
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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