Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156756
Title: Metal oxide charge trapping transistors
Authors: Leong, Kai Xiang
Keywords: Engineering::Materials
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Leong, K. X. (2022). Metal oxide charge trapping transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156756
Abstract: Discrete particle charge trapping layers and their application in non-volatile memory devices have received much attention from industry and academia due to their advantages over continuous film charge trapping layers. This project studied the use of crystalline Silicon microparticle as a charge trapping layer in an Indium-Zinc-Oxide (IZO) based memory TFT. As of writing this paper, this specific device stack had yet to be characterised in literature and was reported for the first time in this study. SEM and DLS was used in the selection of parameters to optimise particle density and size uniformity. FTIR and UV-vis was utilised to characterise chemical composition and bandgap of Si particles. Output, transfer characteristics, and memory characteristics were measured to appraise the performance and feasibility of the device.
URI: https://hdl.handle.net/10356/156756
Fulltext Permission: embargo_restricted_20221020
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

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