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|Title:||Metal oxide charge trapping transistors||Authors:||Leong, Kai Xiang||Keywords:||Engineering::Materials||Issue Date:||2022||Publisher:||Nanyang Technological University||Source:||Leong, K. X. (2022). Metal oxide charge trapping transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156756||Abstract:||Discrete particle charge trapping layers and their application in non-volatile memory devices have received much attention from industry and academia due to their advantages over continuous film charge trapping layers. This project studied the use of crystalline Silicon microparticle as a charge trapping layer in an Indium-Zinc-Oxide (IZO) based memory TFT. As of writing this paper, this specific device stack had yet to be characterised in literature and was reported for the first time in this study. SEM and DLS was used in the selection of parameters to optimise particle density and size uniformity. FTIR and UV-vis was utilised to characterise chemical composition and bandgap of Si particles. Output, transfer characteristics, and memory characteristics were measured to appraise the performance and feasibility of the device.||URI:||https://hdl.handle.net/10356/156756||Fulltext Permission:||embargo_restricted_20221020||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Student Reports (FYP/IA/PA/PI)|
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|1.49 MB||Adobe PDF||Under embargo until Oct 20, 2022|
Updated on May 20, 2022
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