Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156756
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dc.contributor.authorLeong, Kai Xiangen_US
dc.date.accessioned2022-04-23T11:26:44Z-
dc.date.available2022-04-23T11:26:44Z-
dc.date.issued2022-
dc.identifier.citationLeong, K. X. (2022). Metal oxide charge trapping transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156756en_US
dc.identifier.urihttps://hdl.handle.net/10356/156756-
dc.description.abstractDiscrete particle charge trapping layers and their application in non-volatile memory devices have received much attention from industry and academia due to their advantages over continuous film charge trapping layers. This project studied the use of crystalline Silicon microparticle as a charge trapping layer in an Indium-Zinc-Oxide (IZO) based memory TFT. As of writing this paper, this specific device stack had yet to be characterised in literature and was reported for the first time in this study. SEM and DLS was used in the selection of parameters to optimise particle density and size uniformity. FTIR and UV-vis was utilised to characterise chemical composition and bandgap of Si particles. Output, transfer characteristics, and memory characteristics were measured to appraise the performance and feasibility of the device.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.subjectEngineering::Materialsen_US
dc.titleMetal oxide charge trapping transistorsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorNripan Mathewsen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.degreeBachelor of Engineering (Materials Engineering)en_US
dc.contributor.supervisoremailNripan@ntu.edu.sgen_US
item.grantfulltextembargo_restricted_20221020-
item.fulltextWith Fulltext-
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)
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