Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156824
Title: Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress
Authors: An, Shu
Tai, Yeh-Chen
Lee, Kuo-Chih
Shin, Sang-Ho
Cheng, H. H.
Chang, Guo-En
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2021
Source: An, S., Tai, Y., Lee, K., Shin, S., Cheng, H. H., Chang, G. & Kim, M. (2021). Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress. Nanotechnology, 32(35), 355704-. https://dx.doi.org/10.1088/1361-6528/ac03d7
Project: A2084c0066
Journal: Nanotechnology
Abstract: The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strain in GeSn alloys. Here, we have investigated the Raman-strain function of Ge1-xSnx along <1 0 0> and <1 1 0> directions. GeSn nanomembranes (NMs) with different Sn compositions are transfer-printed on polyethylene terephthalate (PET) substrates. External strain is introduced by bending fixtures with different radii, leading to uniaxial tensile strain up to 0.44%. Strain analysis of flexible GeSn NMs bent along <1 0 0> and <1 1 0> directions are performed by Raman spectroscopy. The linear coefficients of Raman-strain for Ge0.96Sn0.04 are measured to be −1.81 and −2.60 cm-1, while those of Ge0.94Sn0.06 are decreased to be −2.69 and −3.82 cm-1 along <1 0 0> and <1 1 0> directions, respectively. As a result, the experimental ratio of linear coefficient (ROLC) of Ge, Ge0.96Sn0.04 and Ge0.94Sn0.06 are 1.34, 1.44 and 1.42, which agree well with theoretical ROLC values calculated by elastic compliances and phonon deformation potentials (PDPs). In addition, the compositional dependence of PDPs is analyzed qualitatively. These fundamental parameters are important in designing high performance strained GeSn electronic and photonic devices.
URI: https://hdl.handle.net/10356/156824
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ac03d7
Rights: © 2021 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6528/ac03d7.
Fulltext Permission: embargo_20220616
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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