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Title: Direct chemisorption-assisted nanotransfer printing with wafer-scale uniformity and controllability
Authors: Zhao, Zhi-Jun
Shin, Sang-Ho
Lee, Sang Yeon
Son, Bongkwon
Liao, Yikai
Hwang, Soonhyoung
Jeon, Sohee
Kang, Hyeokjoong
Kim, Munho
Jeong, Jun-Ho
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2022
Source: Zhao, Z., Shin, S., Lee, S. Y., Son, B., Liao, Y., Hwang, S., Jeon, S., Kang, H., Kim, M. & Jeong, J. (2022). Direct chemisorption-assisted nanotransfer printing with wafer-scale uniformity and controllability. ACS Nano, 16(1), 378-385.
Project: A2084c0066
2018-T1-002-115 (RG 173/18)
Journal: ACS Nano 
Abstract: Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However, conventional methods via a chemical medium hamper the efficient fabrication with large-area uniformity and rapid development of electronic and photonic devices. Herein, we report a direct chemisorption-assisted nanotransfer printing technique based on the nanoscale lower melting effect, which is an enabling technology for two- or three-dimensional nanostructures with feature sizes ranging from tens of nanometers up to a 6 in. wafer-scale. The method solves the major bottleneck (large-scale uniform metal catalysts with nanopatterns) encountered by metal-assisted chemical etching. It also achieves wafer-scale, uniform, and controllable nanostructures with extremely high aspect ratios. We further demonstrate excellent uniformity and high performance of the resultant devices by fabricating 100 photodetectors on a 6 in. Si wafer. Therefore, our method can create a viable route for next-generation, wafer-scale, uniformly ordered, and controllable nanofabrication, leading to significant advances in various applications, such as energy harvesting, quantum, electronic, and photonic devices.
ISSN: 1936-0851
DOI: 10.1021/acsnano.1c06781
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: embargo_20230202
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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