Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156828
Title: Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer
Authors: Liao, Yikai
Zheng, Yixiong
Shin, Sang-Ho
Zhao, Zhi-Jun
An, Shu
Seo, Jung-Hun
Jeong, Jun-Ho
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2022
Source: Liao, Y., Zheng, Y., Shin, S., Zhao, Z., An, S., Seo, J., Jeong, J. & Kim, M. (2022). Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer. Advanced Optical Materials. https://dx.doi.org/10.1002/adom.202200062
Project: A2084c0066
T2EP50120-0003
2020-T1-002-020 (RG136/20)
Journal: Advanced Optical Materials
Abstract: Broadband ultraviolet–visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet–visible photodetection. In this work, a monolithic integration strategy of nanopillar antireflective structure and InGaZnO (IGZO) ultraviolet absorbing layer is proposed to enhance the ultraviolet–visible spectral responsivity of GaAs photodetectors. Both nanopillar topography and IGZO layer exhibit antireflective performance, leading to the enhancement of the light absorption and responsivity of the photodetectors. By the combination of nanopillar structure and IGZO layer, a distinct responsivity enhancement of more than one-order magnitude covering 300–800 nm wavelength range is realized compared with planar GaAs photodetectors. This work offers great promises for advanced GaAs-based ultraviolet–visible optoelectronics.
URI: https://hdl.handle.net/10356/156828
ISSN: 2195-1071
DOI: 10.1002/adom.202200062
Rights: This is the peer reviewed version of the following article: Liao, Y., Zheng, Y., Shin, S., Zhao, Z., An, S., Seo, J., Jeong, J. & Kim, M. (2022). Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer. Advanced Optical Materials, which has been published in final form at https://doi.org/10.1002/adom.202200062. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20230422
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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