Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156829
Title: Ultraviolet antireflective porous nanoscale periodic hole array of 4H-SiC by photon-enhanced metal-assisted chemical etching
Authors: Liao, Yikai
Shin, Sang-Ho
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2022
Source: Liao, Y., Shin, S. & Kim, M. (2022). Ultraviolet antireflective porous nanoscale periodic hole array of 4H-SiC by photon-enhanced metal-assisted chemical etching. Applied Surface Science, 581, 152387-. https://dx.doi.org/10.1016/j.apsusc.2021.152387
Project: A2084c0066
T2EP50120-0003
2018-T1-002-115 (RG 173/18)
Journal: Applied Surface Science
Abstract: Benefitting from the outstanding stability and suitable bandgap energy, silicon carbide (SiC) shows promising applications especially for ultraviolet light detection in harsh environments. Traditionally, 4H-SiC surface antireflection textures which boost light harvesting have been realized by plasma dry etching due to its chemical inertness, nevertheless causing surface damage which is detrimental to device performance. This paper presents 4H-SiC porous nanoscale periodic hole array with outstanding ultraviolet antireflection capability by highly efficient plasma-free photon-enhanced metal-assisted chemical etching. Its formation process is carefully monitored with etching mechanism explained by carrier generation and mass transport. Effect of pattern dimension on etching is also investigated, which is closely related with catalyst coverage. The 4H-SiC porous nanoscale periodic hole array by photon-enhanced metal-assisted chemical etching sheds light on novel applications in ultraviolet light harvesting and detection.
URI: https://hdl.handle.net/10356/156829
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2021.152387
Rights: © 2021 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V.
Fulltext Permission: embargo_20240422
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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  Until 2024-04-22
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