Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156842
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dc.contributor.authorXin, Jiwuen_US
dc.contributor.authorLi, Wangen_US
dc.contributor.authorLi, Sihuien_US
dc.contributor.authorTao, Yangen_US
dc.contributor.authorXu, Tianen_US
dc.contributor.authorLuo, Yuboen_US
dc.contributor.authorJiang, Qinghuien_US
dc.contributor.authorWei, Leien_US
dc.contributor.authorYang, Junyouen_US
dc.date.accessioned2022-05-05T02:05:29Z-
dc.date.available2022-05-05T02:05:29Z-
dc.date.issued2022-
dc.identifier.citationXin, J., Li, W., Li, S., Tao, Y., Xu, T., Luo, Y., Jiang, Q., Wei, L. & Yang, J. (2022). Two-dimensional layered architecture constructing energy and phonon blocks for enhancing thermoelectric performance of InSb. Science China Materials, 65(5), 1353-1361. https://dx.doi.org/10.1007/s40843-021-1921-3en_US
dc.identifier.issn2199-4501en_US
dc.identifier.urihttps://hdl.handle.net/10356/156842-
dc.description.abstractInSb is a narrow-bandgap semiconductor with a zinc blende structure and has been wildly applied in photodetectors, infrared thermal imaging, and Hall devices. The facts of decent band structure, ultrahigh electron mobility, and nontoxic nature indicate that InSb may be a potential mid-temperature thermoelectric material. The critical challenges of InSb, such as high thermal conductivity and small Seebeck coefficient, have induced its ultrahigh lattice thermal conductivity, and thus low ZT values. In view of this, we have developed a competitive strategy typified by the cost-efficient nanocompositing of z wt% QSe2 (Q = Sn, W). Specifically, the QIn+ and SeSb+ point defects were introduced in the InSb system by nanocompositing the vested two-dimensional layered QSe2. In addition, the enlarged valence band maximum of intrinsic WSe2 acted as ladders can scatter a fair number of hole carriers, resulting in the relatively enhanced Seebeck coefficient of high temperature. Moreover, the disorderly distributed nanosheets/particles, and dislocations acting as obstacles can effectively delay the heat flow diffusion, inducing the strong scattering of thermal phonons. Consequently, an enhanced power factor of ∼33.3 µW cm−1 K−2 and ZT value of ∼0.82 at 733 K have been achieved in the 3% WSe2 sample, companied with the engineering output power density ωmax ∼233 µW cm−2 and thermoelectric conversion efficiency η ∼5.2%. This artificially designed approach indicated by suited nanocompositing can integrate several engineering strategies such as point defects, nanoengineering, and energy filtering into one, providing a reference to optimize the thermoelectric performance of other thermoelectric systems. [Figure not available: see fulltext.]en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationMOE2019-T2-2-127en_US
dc.relationMOET2EP50120-0002en_US
dc.relationA2083c0062en_US
dc.relationRG90/19en_US
dc.relationRG73/ 19en_US
dc.relationNRF-CRP18-2017-02en_US
dc.relation.ispartofScience China Materialsen_US
dc.relation.uri10.21979/N9/KF5MAZen_US
dc.rights© 2022 Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature. All rights reserved. This paper was published in Science China Materials and is made available with permission of Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleTwo-dimensional layered architecture constructing energy and phonon blocks for enhancing thermoelectric performance of InSben_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1007/s40843-021-1921-3-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.scopus2-s2.0-85124124370-
dc.identifier.issue5en_US
dc.identifier.volume65en_US
dc.identifier.spage1353en_US
dc.identifier.epage1361en_US
dc.subject.keywordsFibersen_US
dc.subject.keywordsThermoelectricen_US
dc.description.acknowledgementThis work was supported by the National Natural Science Foundation of China (92163211 and 51872102), Foshan (Southern China) Institute for New Materials (2021AYF25005), Singapore Ministry of Education Academic Research Fund Tier 2 (MOE2019-T2-2-127 and MOET2EP50120-0002), the A*STAR under AME IRG (A2083c0062), Singapore Ministry of Education Academic Research Fund Tier 1 (RG90/19 and RG73/ 19), and Singapore National Research Foundation Competitive Research Program (NRF-CRP18-2017-02).en_US
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item.grantfulltextembargo_20230131-
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