Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156843
Title: Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing
Authors: Chen, Qimiao
Wu, Shaoteng
Zhang, Lin
Zhou, Hao
Fan, Weijun
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Chen, Q., Wu, S., Zhang, L., Zhou, H., Fan, W. & Tan, C. S. (2022). Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing. Nanoscale. https://dx.doi.org/10.1039/D1NR07293E
Project: NRF-CRP19- 2017-01
T2EP50121-0001 (MOE-000180-01)
2021-T1-002-031 (RG112/21)
Journal: Nanoscale
Abstract: Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for advanced electronic and photonic devices with attractive features such as transferability and flexibility, enabling heterogeneous integration of multi-functional components. Here, we demonstrate the transferable single-layer GeSn NM resonant-cavity-enhanced photodetectors for 2 μm optical communication and multi-spectral short-wave infrared sensing/imaging applications. The single-layer strain-free GeSn NMs with Sn concentration of 10% are released from a high-quality GeSn-on-insulator (GSOI) substrate with the defective interface regions removed. By transferring the GeSn NMs onto a predesigned distribution Bragg reflector (DBR)/Si substrate, a vertical microcavity is integrated to the device to enhance the light-matter interaction in the GeSn NM. With the integrated cavity and high-quality single-layer GeSn NM, a record responsivity of 0.51 A/W at 2 μm wavelength at room temperature is obtained, which is more than two orders of magnitude higher than the reported values of the multiple-layer GeSn membrane photodetectors without cavities. The potential of the device for multi-spectral photodetection is demonstrated by tuning the responsivity spectrum with different NM thicknesses. Theoretical simulations are utilized to analyze and verify the mechanisms of responsivity enhancement. The approach can be applied to other GeSn-NM-based active devices, such as electro-absorption modulators or light emitters and present a new pathway towards heterogeneous group-IV photonic integrated circuits with miniaturized devices.
URI: https://hdl.handle.net/10356/156843
ISSN: 2040-3364
DOI: 10.1039/D1NR07293E
Rights: © 2022 Royal Society of Chemistry. All rights reserved. This paper was published in Nanoscale and is made available with permission of Royal Society of Chemistry
Fulltext Permission: embargo_20230425
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
27-Nanoscale GeSn membrane.pdf
  Until 2023-04-25
1.19 MBAdobe PDFUnder embargo until Apr 25, 2023

Page view(s)

19
Updated on May 20, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.