Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156857
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dc.contributor.authorChen, Zhiyongen_US
dc.contributor.authorXiong, Leien_US
dc.contributor.authorLi, Guangyuanen_US
dc.contributor.authorWei, Leien_US
dc.contributor.authorYang, Chunleien_US
dc.contributor.authorChen, Mingen_US
dc.date.accessioned2022-05-04T08:13:01Z-
dc.date.available2022-05-04T08:13:01Z-
dc.date.issued2022-
dc.identifier.citationChen, Z., Xiong, L., Li, G., Wei, L., Yang, C. & Chen, M. (2022). Wafer-scale growth of vertical-structured SnSe₂ nanosheets for highly sensitive, fast-response UV–Vis–NIR broadband photodetectors. Advanced Optical Materials, 10(5), 2102250-. https://dx.doi.org/10.1002/adom.202102250en_US
dc.identifier.issn2195-1071en_US
dc.identifier.urihttps://hdl.handle.net/10356/156857-
dc.description.abstractOwing to the strong light–matter interactions, 2D semiconducting thin films have shown their great potential in the development of high-performance ultraviolet–visible–near infrared (UV–Vis–NIR) broadband photodetectors (PDs). However, the planar 2D semiconducting thin films via conventional growth method are often in the form of isolated flakes and/or suffering from low absorption efficiency of light, which hinders the UV–Vis–NIR optoelectronics from widespread applications. Herein are reported high-performance nonplanar UV–Vis–NIR broadband PD arrays, based on wafer-scale, vertical-structured SnSe2 nanosheet arrays (NSAs) via low-temperature molecular beam epitaxy method. The vertical-structured SnSe2 NSAs possess light absorption efficiency of >90% covering the wave range from 340 to 650 nm. Benefiting from the excellent light trapping ability and uniformity of waferscaled SnSe2 NSAs as well as relatively short channel, the broadband PD arrays exhibit superior comprehensive performance. They achieve a high responsivity of 31.94 A W-1, fast speed (≈63 μs), and high uniformity. In addition, the responsivity of the broadband PD arrays is further improved via Zn-doping technique.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationMOE2019-T2-2-127en_US
dc.relationMOE-T2EP50120-0002en_US
dc.relationRG90/19en_US
dc.relationRG73/19en_US
dc.relation.ispartofAdvanced Optical Materialsen_US
dc.relation.uri10.21979/N9/LVQ8NKen_US
dc.rightsThis is the peer reviewed version of the following article: Chen, Z., Xiong, L., Li, G., Wei, L., Yang, C. & Chen, M. (2022). Wafer-scale growth of vertical-structured SnSe₂ nanosheets for highly sensitive, fast-response UV–Vis–NIR broadband photodetectors. Advanced Optical Materials, 10(5), 2102250-, which has been published in final form at https://doi.org/10.1002/adom.202102250. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleWafer-scale growth of vertical-structured SnSe₂ nanosheets for highly sensitive, fast-response UV–Vis–NIR broadband photodetectorsen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1002/adom.202102250-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.scopus2-s2.0-85121543324-
dc.identifier.issue5en_US
dc.identifier.volume10en_US
dc.identifier.spage2102250en_US
dc.subject.keywordsFibersen_US
dc.subject.keywordsUltraviolet–Visible–Near Infrared (UV–Vis–NIR)en_US
dc.description.acknowledgementThis work was partially supported by the National Key R&D Program of China (2018YFB1500200), Shenzhen Basic Research Grant: JCYJ20180507182431967, GJHZ20200731095601004, JCYJ20200109114801744, Shenzhen Peacock Technology Innovation Project: KQJSCX20170731165602155, the National Nature Science Foundation of China (11804354, 52003288, 61574157, 61774164, 52173243). The authors are also grateful for the support of the Singapore Ministry of Education Academic Research FundTier 2 (MOE2019-T2-2-127 and MOE-T2EP50120-0002) and the Singapore Ministry of Education Academic Research Fund Tier 1 (RG90/19 and RG73/19).en_US
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