Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156876
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dc.contributor.authorZhang, Yi-Yuen_US
dc.contributor.authorShin, Sang-Hoen_US
dc.contributor.authorKang, Hyeok-Joongen_US
dc.contributor.authorJeon, Soheeen_US
dc.contributor.authorHwang, Soon Hyoungen_US
dc.contributor.authorZhou, Weidongen_US
dc.contributor.authorJeong, Jun-Hoen_US
dc.contributor.authorLi, Xiulingen_US
dc.contributor.authorKim, Munhoen_US
dc.date.accessioned2022-04-26T05:40:33Z-
dc.date.available2022-04-26T05:40:33Z-
dc.date.issued2021-
dc.identifier.citationZhang, Y., Shin, S., Kang, H., Jeon, S., Hwang, S. H., Zhou, W., Jeong, J., Li, X. & Kim, M. (2021). Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching. Applied Surface Science, 546, 149083-. https://dx.doi.org/10.1016/j.apsusc.2021.149083en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttps://hdl.handle.net/10356/156876-
dc.description.abstractPorous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a releasable form (e.g., free-standing PGe) by lithography-free metal-assisted chemical etching (MacEtch) at room temperature under open-circuit. A thin layer of Au is evaporated on the entire surface of c-Ge and Ge on insulator prior to immersion in an etching solution. It is found that an oxide-free interface between the surface and metal catalyst is vital to form uniform PGe layer. PGe layers with different morphologies and thicknesses are produced after various MacEtch times. In order to show the functionality of PGe, reflection spectra of c-Ge (i.e., before etching) and PGe layers are characterized at a wavelength range of 1000–1600 nm. The reflection of PGe is broadly reduced to 10%, which matches well with simulation results based on finite-difference-time-domain method. Among all the modeling factors, thickness of PGe layers is found to be the primary cause of the broadband reduction of the reflection. In addition, transfer-printable free-standing PGe layers are realized. The capability of the simple, clean, and lithography-free MacEtch to achieve PGe on rigid substrates as well as in a free-standing form holds significant potential in photonic and optoelectronic device applications.en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relation2018-T1-002-115 (RG 173/18)en_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rights© 2021 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleAnti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etchingen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1016/j.apsusc.2021.149083-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.scopus2-s2.0-85099792202-
dc.identifier.volume546en_US
dc.identifier.spage149083en_US
dc.subject.keywordsMetal-Assisted Chemical Etchingen_US
dc.subject.keywordsAnti-Reflectionen_US
dc.description.acknowledgementThe work was supported by Ministry of Education, Singapore, under grant AcRF TIER 1-2018-T1-002-115 (RG 173/18). Simulation part was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2020-0-00914, Development of hologram printing downsizing technology based on holographic optical element (HOE) and No. 2020-0-00109, Development of holographic lithography equipment and printing technology for security and books). X.L. acknowledges the US NSF DMR Award #1508140.en_US
item.fulltextWith Fulltext-
item.grantfulltextembargo_20230203-
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