Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156876
Title: Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching
Authors: Zhang, Yi-Yu
Shin, Sang-Ho
Kang, Hyeok-Joong
Jeon, Sohee
Hwang, Soon Hyoung
Zhou, Weidong
Jeong, Jun-Ho
Li, Xiuling
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Zhang, Y., Shin, S., Kang, H., Jeon, S., Hwang, S. H., Zhou, W., Jeong, J., Li, X. & Kim, M. (2021). Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching. Applied Surface Science, 546, 149083-. https://dx.doi.org/10.1016/j.apsusc.2021.149083
Project: 2018-T1-002-115 (RG 173/18)
Journal: Applied Surface Science
Abstract: Porous Ge (PGe) layer is formed on single-crystalline Ge (c-Ge) as well as in a releasable form (e.g., free-standing PGe) by lithography-free metal-assisted chemical etching (MacEtch) at room temperature under open-circuit. A thin layer of Au is evaporated on the entire surface of c-Ge and Ge on insulator prior to immersion in an etching solution. It is found that an oxide-free interface between the surface and metal catalyst is vital to form uniform PGe layer. PGe layers with different morphologies and thicknesses are produced after various MacEtch times. In order to show the functionality of PGe, reflection spectra of c-Ge (i.e., before etching) and PGe layers are characterized at a wavelength range of 1000–1600 nm. The reflection of PGe is broadly reduced to 10%, which matches well with simulation results based on finite-difference-time-domain method. Among all the modeling factors, thickness of PGe layers is found to be the primary cause of the broadband reduction of the reflection. In addition, transfer-printable free-standing PGe layers are realized. The capability of the simple, clean, and lithography-free MacEtch to achieve PGe on rigid substrates as well as in a free-standing form holds significant potential in photonic and optoelectronic device applications.
URI: https://hdl.handle.net/10356/156876
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2021.149083
Rights: © 2021 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V.
Fulltext Permission: embargo_20230203
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Files in This Item:
File Description SizeFormat 
Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching.pdf
  Until 2023-02-03
1.33 MBAdobe PDFUnder embargo until Feb 03, 2023

Page view(s)

19
Updated on Jul 4, 2022

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.