Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156879
Title: High-sensitivity and mechanically compliant flexible Ge photodetectors with a vertical p-i-n configuration
Authors: An, Shu
Wu, Shaoteng
Lee, Kwang-Hong
Tan, Chuan Seng
Tai, Yeh-Chen
Chang, Guo-En
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: An, S., Wu, S., Lee, K., Tan, C. S., Tai, Y., Chang, G. & Kim, M. (2021). High-sensitivity and mechanically compliant flexible Ge photodetectors with a vertical p-i-n configuration. ACS Applied Electronic Materials, 3(4), 1780-1786. https://dx.doi.org/10.1021/acsaelm.1c00054
Project: A2084c0066
M4082289.040
NRF-CRP19-2017-01
MOE2018-T2-1-137
Journal: ACS Applied Electronic Materials
Abstract: We have demonstrated high-performance flexible germanium (Ge) vertical p-i-n photodetectors (PDs) based on a resonant cavity structure by a direct flip transfer of Ge nanomembranes on polyethylene terephthalate (PET) substrates. Finite-difference time-domain simulation proves that the vertical cavity structure composed of the bottom gold and top SU-8 layers as a reflector and an anti-reflection surface, respectively, could enhance the average absorption in the near-infrared (NIR) region (i.e., 1520-1640 nm) from 0.06 to 0.20 by 233%. Strains introduced into Ge NMs by convex and concave fixtures are measured to be 0.37 and-0.32%, respectively. The fabricated PDs exhibit a low dark current density of 9.6 mA/cm2 at-1 V and a high forward-reverse current ratio of 105 under the flat condition. Responsivity at 1550 nm increases from 52.5 to 133.8 mA/W by tensile strain, while it slightly decreases to 32.6 mA/W under comparable compressive strain. Furthermore, the devices show no degradation in their optoelectronic responses after 200 bending cycles at convex fixtures with a radius of 30 mm. Overall, such flexible Ge PDs with the capabilities of both excellent optoelectronic performance and mechanical durability represent significant advances in the field of group IV NIR optoelectronic devices.
URI: https://hdl.handle.net/10356/156879
ISSN: 2637-6113
DOI: 10.1021/acsaelm.1c00054
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.1c00054.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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