Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156882
Title: A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared
Authors: Shin, Sang-Ho
Liao, Yikai
Son, Bongkwon
Zhao, Zhi-Jun
Jeong, Jun-Ho
Tan, Chuan Seng
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Shin, S., Liao, Y., Son, B., Zhao, Z., Jeong, J., Tan, C. S. & Kim, M. (2021). A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared. Journal of Materials Chemistry C, 9(31), 9884-9891. https://dx.doi.org/10.1039/D1TC01134K
Project: A2084c0066
2018- T1-002-115 (RG 173/18)
NRF-CRP19-2017-01
2019-T1-002-040 (RG147/19 (S))
Journal: Journal of Materials Chemistry C
Abstract: With increasing demand for infrared (IR) photonics and optoelectronics, germanium (Ge) has recently regained attention due to its outstanding optical properties in the near infrared (NIR) and mid infrared (MIR) ranges. Here we present a highly ordered and damage-free microscale Ge inverted pyramid array fabricated by HF-free metal-assisted chemical etching. The surface quality of the inverted pyramid is systematically investigated, demonstrating the good preservation of single crystallinity with a minimized amount of defects at etched surfaces. In addition, an outstanding antireflection performance of the Ge inverted pyramid is realized in a broadband MIR wavelength range up to 15 μm. The damage-free Ge inverted pyramid array, together with its strong antireflection capability in the MIR range, provides an outstanding platform for future MIR photonic and optoelectronic applications.
URI: https://hdl.handle.net/10356/156882
ISSN: 2050-7526
DOI: 10.1039/D1TC01134K
Rights: © 2021 The Royal Society of Chemistry. All rights reserved. This paper was published in Journal of Materials Chemistry C and is made available with permission of The Royal Society of Chemistry.
Fulltext Permission: embargo_20220712
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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