Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156884
Title: Black germanium photodetector exceeds external quantum efficiency of 160%
Authors: An, Shu
Liao, Yikai
Shin, Sang-Ho
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: An, S., Liao, Y., Shin, S. & Kim, M. (2022). Black germanium photodetector exceeds external quantum efficiency of 160%. Advanced Materials Technologies, 7(1), 2100912-. https://dx.doi.org/10.1002/admt.202100912
Project: A2084c0066
T2EP50120-0003
Journal: Advanced Materials Technologies
Abstract: In this work, a viable method is demonstrated to realize high-performance germanium (Ge) photodetectors (PDs) on the nanostructured Ge surface, namely black Ge, formed by chlorine (Cl2) gas-based reactive ion etching at room temperature. Black Ge surface has spike-like pyramidal structures with a width and height up to 150 and 570 nm, respectively. Average reflection of black Ge is reduced to 2% at a wavelength range from 1 to 2 µm, while that of planar Ge is ≈37%. Light absorption is strongly enhanced by the significantly reduced reflection, thereby leading to an increase in responsivity of black Ge PDs. Moreover, external quantum efficiency (EQE) exceeds 160% at 1550 nm, indicating the existence of internal gain resulted from multiple carrier generation in Ge nanostructures. Therefore, this work provides an effective and reliable approach to significantly enhance photodetection performance of Ge-based optoelectronic devices.
URI: https://hdl.handle.net/10356/156884
ISSN: 2365-709X
DOI: 10.1002/admt.202100912
Rights: This is the peer reviewed version of the following article: An, S., Liao, Y., Shin, S. & Kim, M. (2022). Black germanium photodetector exceeds external quantum efficiency of 160%. Advanced Materials Technologies, 7(1), 2100912-, which has been published in final form at Advanced Materials Technologies. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20230207
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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  Until 2023-02-07
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