Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156889
Title: Producing microscale Ge textures via titanium nitride- and nickel-assisted chemical etching with CMOS-compatibiliyty
Authors: Liao, Yikai
Shin, Sang-Ho
Jin, Yuhao
Wang, Qi Jie
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Liao, Y., Shin, S., Jin, Y., Wang, Q. J. & Kim, M. (2021). Producing microscale Ge textures via titanium nitride- and nickel-assisted chemical etching with CMOS-compatibiliyty. Advanced Materials Interfaces, 8(20), 2100937-. https://dx.doi.org/10.1002/admi.202100937
Project: A2084c0066
T2EP50120-0003
NRF-CRP18-2017-02
NRF-CRP19-2017-01
A18A7b0058
MOE2018-T2-1-176
Journal: Advanced Materials Interfaces
Abstract: As an emerging anisotropic wet etching technique, metal-assisted chemical etching (MacEtch) has been widely employed for fabricating nano- and micro-structures of germanium (Ge) for potential infrared (IR) photonics and optoelectronics. However, traditional noble metal catalysts such as Au and Ag limit its application in complementary metal oxide semiconductor (CMOS) processes, as Au is considered as a detrimental deep-level impurity in Ge. In this work, the feasibility of exploring TiN and Ni as CMOS-compatible catalysts for Ge MacEtch is investigated. Both TiN and Ni catalysts exhibit inverse MacEtch behavior, resulting in formation of inverted pyramid and v-groove Ge microscale textures which exhibit outstanding IR antireflection performance. No catalyst delamination of TiN is observed during etching, while it can be avoided by inserting a Ti adhesive layer beneath Ni catalyst. Schottky contact barrier of metal catalyst with Ge is also investigated indicating similar hole injection efficiency among TiN, Ni, and Ti/Ni with Ge junction due to strong Fermi level pinning effect. The TiN- and Ni-assisted chemical etching of Ge shed light on CMOS-compatible Ge-based photonic and optoelectronic applications.
URI: https://hdl.handle.net/10356/156889
ISSN: 2196-7350
DOI: 10.1002/admi.202100937
Rights: This is the peer reviewed version of the following article: Liao, Y., Shin, S., Jin, Y., Wang, Q. J. & Kim, M. (2021). Producing microscale Ge textures via titanium nitride- and nickel-assisted chemical etching with CMOS-compatibiliyty. Advanced Materials Interfaces, 8(20), 2100937-, which has been published in final form at https://doi.org/10.1002/admi.202100937. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20221029
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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