Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/156891
Title: Releasable AlGaN/GaN 2D electron gas heterostructure membranes for flexible wide-bandgap electronics
Authors: Zhang, Yi-Yu
An, Shu
Zheng, Yi-Xiong
Lai, Junyu
Seo, Jung-Hun
Lee, Kwang Hong
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Zhang, Y., An, S., Zheng, Y., Lai, J., Seo, J., Lee, K. H. & Kim, M. (2022). Releasable AlGaN/GaN 2D electron gas heterostructure membranes for flexible wide-bandgap electronics. Advanced Electronic Materials, 8(2), 2100652-. https://dx.doi.org/10.1002/aelm.202100652
Project: A2084c0066
T2EP50120-0003
Journal: Advanced Electronic Materials
Abstract: The development of transferrable free-standing semiconductor materials and their heterogeneous integration to arbitrary substrates open up new possibilities in improving device performance, exploring nonconventional manufacturing approaches, and offering a pathway to soft, conformal, and flexible electronics. In this work, flexible AlGaN/GaN high-electron mobility transistors (HEMTs) are demonstrated, which are transfer-printed from AlGaN/GaN on insulator to a flexible substrate using a novel releasing strategy based on the fast, facile, and reliable transfer process. Flexible AlGaN/GaN HEMTs possess good electrical performance such as the maximum saturated drain current density and transconductance of 110 mA mm−1 and 42.5 mS mm−1, respectively. Moreover, a significant piezoelectric behavior is observed when the device is under strain, resulting from the piezoelectric-induced polarization at the heterostructure interface. Owing to an additional strain-induced piezoelectric effect by the mechanical bending, the performance of AlGaN/GaN HEMT can be further improved. The results demonstrate that the device has great potential in applications for the next-generation flexible electronics, such as wearable systems, intelligent microinductor systems, and smart systems that can sense or feedback external mechanical stimuli.
URI: https://hdl.handle.net/10356/156891
ISSN: 2199-160X
DOI: 10.1002/aelm.202100652
Rights: This is the peer reviewed version of the following article: Zhang, Y., An, S., Zheng, Y., Lai, J., Seo, J., Lee, K. H. & Kim, M. (2022). Releasable AlGaN/GaN 2D electron gas heterostructure membranes for flexible wide-bandgap electronics. Advanced Electronic Materials, 8(2), 2100652-, which has been published in final form at https://doi.org/10.1002/aelm.202100652. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20230307
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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