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dc.contributor.authorAggarwal, Saumayen_US
dc.identifier.citationAggarwal, S. (2022). Optimization of low-noise rapid data collection in TMDC semiconductor devices. Final Year Project (FYP), Nanyang Technological University, Singapore.
dc.description.abstractThe impending stagnation of scalability in silicon semiconductor transistor industry has led researchers to explore two-dimensional transition metal dichalcogenides (TMDCs). TMDCs can be exfoliated into a few atom-thick layers with unique electrical and optical properties. TMDCs have applications in nano-electronical and optoelectrical devices such as biosensors, field effect transistors (FETs), photodiodes, nano-wearable technology, and transparent flexible displays. There is still a large research potential of these materials to investigate their properties and new physics such as spintronics and valleytronics, hence there is a need to speed up and optimize the data collection for experimentation on such devices. To this end, we compare a specialist, self-contained electrical transport measurement instrument (Nanonis Tramea TM) to a traditional setup consisting of separate lock-ins, voltage sources, and amplifiers integrated together with LabView. The trade-off between their data collection time and noise level is compared, while verifying electrical transport properties of a MoS2 based FET device. The study found the Nanonis Tramea system to be almost 100 times faster than a traditional lock-in setup with LabView, while maintaining a higher signal to noise ratio. This could potential cut down experimentation times from weeks to days. The peak mobility of the tri-layer MoS2 FET at room temperature is found to be 4.7 cm2 V-1 s-1, with an on/off ratio of 500:1.en_US
dc.publisherNanyang Technological Universityen_US
dc.titleOptimization of low-noise rapid data collection in TMDC semiconductor devicesen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorBent Weberen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.degreeBachelor of Science in Applied Physicsen_US
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Appears in Collections:SPMS Student Reports (FYP/IA/PA/PI)
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