Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/157743
Title: Robust sensing circuits for resistive memory
Authors: Song, Yuewei
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Song, Y. (2022). Robust sensing circuits for resistive memory. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157743
Abstract: With the rapid development of memory, it has entered all aspects of people's life. Based on the development and application of memory, this thesis introduces Flash memory, which is commonly used nowadays, and then introduces RRAM and shows its advantages over Flash. The existing model of RRAM is described, and its simulation and parametric analysis are carried out. In addition, a robust sensing circuit for RRAM resistance variation is designed, tested and analyzed. At the end, an outlook on the future development trend of RRAM is given. Keywords: Memories, RRAM, Sensing circuit, Resistance
URI: https://hdl.handle.net/10356/157743
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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