Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/157764
Title: Resisitive switching devices based on halide perovskites
Authors: Hazirah Hassan
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Hazirah Hassan (2022). Resisitive switching devices based on halide perovskites. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157764
Project: A2014-211 
Abstract: In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report.
URI: https://hdl.handle.net/10356/157764
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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