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Title: | Resisitive switching devices based on halide perovskites | Authors: | Hazirah Hassan | Keywords: | Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 2022 | Publisher: | Nanyang Technological University | Source: | Hazirah Hassan (2022). Resisitive switching devices based on halide perovskites. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157764 | Project: | A2014-211 | Abstract: | In this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report. | URI: | https://hdl.handle.net/10356/157764 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Student Reports (FYP/IA/PA/PI) |
Files in This Item:
File | Description | Size | Format | |
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FYP Final Report_v2_Hazirah.pdf Restricted Access | 1.56 MB | Adobe PDF | View/Open |
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