Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/157764
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dc.contributor.authorHazirah Hassanen_US
dc.date.accessioned2022-05-23T04:25:26Z-
dc.date.available2022-05-23T04:25:26Z-
dc.date.issued2022-
dc.identifier.citationHazirah Hassan (2022). Resisitive switching devices based on halide perovskites. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/157764en_US
dc.identifier.urihttps://hdl.handle.net/10356/157764-
dc.description.abstractIn this Final Year Report, the fabrication of resistive switching devices and Silver Bismuth Iodide mixture will be researched and experimented on. The report will go on to describe in detail the steps taken to fabricate the film. There will be two different methods of spin coating, the first one being Formic Acid not added deposited separately from the precursor solution while the second method will be Formic Acid added to the precursor solution before deposition on the substrate. Other factors such as ratio of Formic Acid to Precursor solution and Spin rate during spin coating is also discussed in the report.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.relationA2014-211en_US
dc.subjectEngineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleResisitive switching devices based on halide perovskitesen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorAng Diing Shenpen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineering (Electrical and Electronic Engineering)en_US
dc.contributor.supervisoremailEDSAng@ntu.edu.sgen_US
item.grantfulltextrestricted-
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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