Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/158174
Title: Electrical stress and failure analysis of power semiconductor devices
Authors: Chee, Sean Nicholas
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Chee, S. N. (2022). Electrical stress and failure analysis of power semiconductor devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/158174
Project: A2249-211
Abstract: Power electronics' importance is expanding in both industry and society. It has the potential to dramatically increase the efficiency of electricity generation systems. They are crucial components of contemporary power electronics, not only for ordinary use, but also for severe environments. The current architecture of power electronics equipment demands substantial redundancy for reliability. Thus, to optimize power density, it is required to first analyze the dependability of power semiconductors to determine a power device's actual operational margin. It is necessary to understand the fundamental principles of semiconductor power devices to fully fulfil this potential. In summary, this report will investigate the I-V characteristic after power cycling test and a Double Pulse Test. FETs made of gallium nitride (GaN) and MOSFET/IGBTs made of silicon (Si) are used. There will be laboratory simulations and experiments. The goal of this study is to analyse the features of degraded power semiconductors, as well as their switching behaviour
URI: https://hdl.handle.net/10356/158174
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
FYP_A2249-211_Sean_Nicholas_Chee_Final_Report.pdf
  Restricted Access
4.05 MBAdobe PDFView/Open

Page view(s)

21
Updated on Dec 5, 2022

Download(s)

2
Updated on Dec 5, 2022

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.