Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/158400
Title: Flexible Gallium Arsenide (GaAs) devices for various applications in Internet of Things (IoT) era
Authors: Ye, Zian
Keywords: Engineering::Computer science and engineering
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Ye, Z. (2022). Flexible Gallium Arsenide (GaAs) devices for various applications in Internet of Things (IoT) era. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/158400
Abstract: Semiconductors have fueled developments in telecommunications, computers, medical services, warfare and security, mobility, renewable technology, and a plethora of other fields. They are also giving rise to new technologies that have the potential to improve civilization, such as neurologically computing, virtual reality, the Internet of Things, energy-efficient sensors, automation technologies, robots, and artificial intelligence. The greatest potential of semiconductors is yet to be achieved. To consistently stay on track with Moore’s Law, which explains that the quantity of circuits on a semiconductor-chip will increase in multiples of 2 every two years. We must continuously experiment with variations of semiconductor materials to achieve the best yield. In this Final Year Project, we study the effect of flexible Gallium Arsenide (GaAs) devices on future applications in Internet of Things era
URI: https://hdl.handle.net/10356/158400
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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