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Title: GaN converter demonstrator
Authors: Villarama, Joseph Christian Aguilar
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Villarama, J. C. A. (2022). GaN converter demonstrator. Final Year Project (FYP), Nanyang Technological University, Singapore.
Project: B1201-211
Abstract: In today’s fast-paced society, innovation is one of the key aspects to technological development. Companies are always striving toward improving their efficiency in order to lower costs and keep up with consumers’ ever-changing needs and wants. In the field of semiconductors, Gallium Nitride (GaN) has been an increasingly used material to power devices due to its higher breakdown strength, faster switching-speed, higher thermal conductivity and lower on- resistance. It thus can offer a pathway to achieve significant energy savings. This report explores how GaN wide-band gap semiconductors perform in high power environments and as a result, whether it can be used in aerospace applications. Using MATLAB/Simulink platform, a simulation of a three-phase converter will be done. In addition, a physical three-phase converter will be developed and the control logic will be implemented in the controller. Thereafter, testing and experimental validation of the results will be done in order to determine the overall efficiency and performance of GaN semiconductors.
Schools: School of Electrical and Electronic Engineering 
Research Centres: Rolls-Royce@NTU Corporate Lab 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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