Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/159219
Title: | Cubic AgMnSbTe₃ semiconductor with a high thermoelectric performance | Authors: | Luo, Yubo Xu, Tian Ma, Zheng Zhang, Dan Guo, Zhongnan Jiang, Qinghui Yang, Junyou Yan, Qingyu Kanatzidis, Mercouri G. |
Keywords: | Engineering::Materials::Functional materials | Issue Date: | 2021 | Source: | Luo, Y., Xu, T., Ma, Z., Zhang, D., Guo, Z., Jiang, Q., Yang, J., Yan, Q. & Kanatzidis, M. G. (2021). Cubic AgMnSbTe₃ semiconductor with a high thermoelectric performance. Journal of the American Chemical Society, 143(34), 13990-13998. https://dx.doi.org/10.1021/jacs.1c07522 | Project: | MOE 2018-T2-1-010 SERC 1527200022 A19D9a0096 |
Journal: | Journal of the American Chemical Society | Abstract: | The reaction of MnTe with AgSbTe2 in an equimolar ratio (ATMS) provides a new semiconductor, AgMnSbTe3. AgMnSbTe3 crys-tallizes in an average rock-salt NaCl structure with Ag, Mn, and Sb cations statistically occupying the Na sites. AgMnSbTe3 is a p-type semiconductor with a narrow band gap of ~0.33 eV. A pair distribution function analysis indicates that local distortions are associated with the location of the Ag atoms in the lattice. Density functional theory calculations suggest a specific electronic band structure with multi-peak valence band maxima prone to energy convergence. In addition, Ag2Te nanograins precipitate at grain boundaries of AgMnSbTe3. The energy offset of the valance band edge between AgMnSbTe3 and Ag2Te is ~0.05 eV, which implies that Ag2Te precipitates exhibit a negligible effect on the hole transmission. As a result, ATMS exhibits a high power factor of ~12.2 μWcm-1K-2 at 823 K, ultralow lattice thermal conductivity of ~0.34 Wm-1K-1 (823 K), high peak ZT of ~1.46 at 823 K, and high av-erage ZT of ~0.87 in the temperature range of 400–823 K | URI: | https://hdl.handle.net/10356/159219 | ISSN: | 0002-7863 | DOI: | 10.1021/jacs.1c07522 | Schools: | School of Materials Science and Engineering | Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.1c07522. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MSE Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
AgMnSbTe3 semiconductor with a high thermoelectric performance.pdf | 1.81 MB | Adobe PDF | View/Open |
SCOPUSTM
Citations
10
53
Updated on Mar 27, 2024
Web of ScienceTM
Citations
10
37
Updated on Oct 29, 2023
Page view(s)
155
Updated on Mar 27, 2024
Download(s) 20
219
Updated on Mar 27, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.