Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/159223
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dc.contributor.authorLuo, Yuboen_US
dc.contributor.authorMa, Zhengen_US
dc.contributor.authorHao, Shiqiangen_US
dc.contributor.authorCai, Songtingen_US
dc.contributor.authorLuo, Zhong-Zhenen_US
dc.contributor.authorWolverton, Christopheren_US
dc.contributor.authorDravid, Vinayak P.en_US
dc.contributor.authorYang, Junyouen_US
dc.contributor.authorYan, Qingyuen_US
dc.contributor.authorKanatzidis, Mercouri G.en_US
dc.date.accessioned2022-06-03T01:17:07Z-
dc.date.available2022-06-03T01:17:07Z-
dc.date.issued2022-
dc.identifier.citationLuo, Y., Ma, Z., Hao, S., Cai, S., Luo, Z., Wolverton, C., Dravid, V. P., Yang, J., Yan, Q. & Kanatzidis, M. G. (2022). Thermoelectric performance of the 2D Bi₂Si₂Te₆ semiconductor. Journal of the American Chemical Society, 144(3), 1445-1454. https://dx.doi.org/10.1021/jacs.1c12507en_US
dc.identifier.issn0002-7863en_US
dc.identifier.urihttps://hdl.handle.net/10356/159223-
dc.description.abstractBi2Si2Te6, a 2D compound, is a direct band gap semiconductor with an optical band gap of 0.25 eV, and is a promising thermoelec-tric material. Single-phase Bi2Si2Te6 is prepared by a scalable ball-milling and annealing process and the highly densified polycrys-talline samples are prepared by spark plasma sintering. Bi2Si2Te6 shows a p-type semiconductor transport behavior and exhibits an intrinsically low lattice thermal conductivity of ~0.48 Wm-1K-1 (cross-plane) at 573 K. The first-principles density functional theory calculations indicate that such low lattice thermal conductivity is derived from the interactions between acoustic phonons and low-lying optical phonons, local vibrations of Bi, the low Debye temperature and strong anharmonicity result from the unique 2D crystal structure and metavalent bonding of Bi2Si2Te6. The Bi2Si2Te6 exhibits an optimal figure of merit ZT of ~0.51 at 623 K, which can be further enhanced by the substitution of Bi with Pb. Pb doping leads to a large increase in power factor S2σ, from ~4.0 μWcm-1K-2 of Bi2Si2Te6 to ~8.0 μWcm-1K-2 of Bi1.98Pb0.02Si2Te6 at 775 K, owing to the increase in carrier concentration. Moreover, Pb doping in-duces a further reduction in the lattice thermal conductivity to ~0.38 Wm-1K-1 (cross-plane) at 623 K in Bi1.98Pb0.02Si2Te6, due to strengthened point defect (PbBi’) scattering. The simultaneous optimization of the power factor and lattice thermal conductivity achieves a peak ZT of ~0.90 at 723 K and a high average ZT of ~0.66 at 400–773 K in Bi1.98Pb0.02Si2Te6.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationMOE 2018-T2-1-010en_US
dc.relationSERC 1527200022en_US
dc.relationA19D9a0096en_US
dc.relation.ispartofJournal of the American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/jacs.1c12507en_US
dc.subjectScience::Chemistry::Inorganic chemistryen_US
dc.subjectEngineering::Materialsen_US
dc.titleThermoelectric performance of the 2D Bi₂Si₂Te₆ semiconductoren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doi10.1021/jacs.1c12507-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.issue3en_US
dc.identifier.volume144en_US
dc.identifier.spage1445en_US
dc.identifier.epage1454en_US
dc.subject.keywordsThermal Conductivityen_US
dc.subject.keywordsBi₂Si₂Te₆en_US
dc.description.acknowledgementThis work was supported in part the Department of Energy, Office of Science Basic Energy Sciences under grant DESC0014520, DOE Office of Science (materials synthesis, TE characterization, TEM, DFT) and in part by the National Natural Science Foundation of China (Grant Nos. 52002137, 92163211, 51802070, and 51632006). This work made use of the EPIC facilities of Northwestern’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. User Facilities are supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-06CH11357 and DE-AC02- 05CH11231. Access to facilities of high-performance computational resources at the Northwestern University is acknowledged. The authors also acknowledge Singapore MOE AcRF Tier 2 under Grant Nos. 2018-T2-1-010, Singapore A*STAR Pharos Program SERC 1527200022, Singapore A*STAR project A19D9a0096, the Fundamental Research Funds for the Central Universities under Grant No. 2021XXJS008 and 2018KFYXKJC002.en_US
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