Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/15953
Title: Characterization of GaN-based semiconductor materials for device applications
Authors: Ng, Yao Heng.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2009
Abstract: This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze and characterize the grown wafers.
URI: http://hdl.handle.net/10356/15953
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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