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Title: Interfacial 2-hydrozybenzophenone passivation for highly efficient and stable perovskite solar cells
Authors: Foo, Shini
Thambidurai, Mariyappan
Harikesh, Padinhare Cholakkal
Mathews, Nripan
Huang, Yizhong
Dang, Cuong
Keywords: Engineering::Materials
Issue Date: 2020
Source: Foo, S., Thambidurai, M., Harikesh, P. C., Mathews, N., Huang, Y. & Dang, C. (2020). Interfacial 2-hydrozybenzophenone passivation for highly efficient and stable perovskite solar cells. Journal of Power Sources, 475, 228665-.
Project: MOE2019-T1-002- 087
Journal: Journal of Power Sources
Abstract: Defects found on the surfaces of organic-inorganic perovskite films are detrimental to the device efficiency, reproducibility and stability. Herein, 2-hydrozybenzophenone (HBP) is introduced to the perovskite/spiro-OMeTAD interface in which the optimized device shows superior power conversion efficiency of 19.28% and long-term stability in which 93% of initial efficiency is retained, despite having been stored for 120 days. Improvements are attributed to the reduction in surface defects and strengthened charge transport properties, which are supported by the enhanced open-circuit voltage and fill factor, respectively. Acting as a Lewis base molecule, effective interactions between HBP and under-coordinated lead ions passivate the surface defects found on the perovskite film, allowing increase in both device efficiency and durability. The increased hydrophobicity further improves the stability of the device. Hence, this work provides a facile yet highly effective approach for achieving high efficiency, reproducibility and stability in planar perovskite solar devices.
ISSN: 0378-7753
DOI: 10.1016/j.jpowsour.2020.228665
Schools: School of Materials Science and Engineering 
School of Electrical and Electronic Engineering 
Interdisciplinary Graduate School (IGS) 
Research Centres: Energy Research Institute @ NTU (ERI@N) 
Research Techno Plaza 
The Photonics Institute 
Centre for OptoElectronics and Biophotonics (OPTIMUS) 
Rights: © 2020 Elsevier B.V. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
ERI@N Journal Articles
IGS Journal Articles
MSE Journal Articles

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