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Title: Water robustness of organic thin-film transistors based on pyrazino[2,3-g]quinoxaline-dione conjugated polymer
Authors: Ko, Jieun
Ng, Chee Koon
Wee, Andrew Thye Shen
Tam, Dexter Teck Lip
Leong, Wei Lin
Keywords: Engineering::Electrical and electronic engineering::Molecular electronics
Issue Date: 2020
Source: Ko, J., Ng, C. K., Arramel, Wee, A. T. S., Tam, D. T. L. & Leong, W. L. (2020). Water robustness of organic thin-film transistors based on pyrazino[2,3-g]quinoxaline-dione conjugated polymer. Journal of Materials Chemistry C, 8(12), 4157-4163.
Project: M4081866
MOE2014-T3-1- 004
Journal: Journal of Materials Chemistry C
Abstract: A robust air and water stable π-conjugated polymer based on pyrazino[2,3-g]quinoxaline-2,7-dione (PQD) modified with long alkyl side chains on both the donor and acceptor units (PQD-HD-4T-DD) was synthesized and demonstrated to be a novel semiconducting layer for highly air and water stable organic thin-film transistors (OTFTs). Due to the alkyl side chains on the donor and acceptor units, the polymer showed good hydrophobicity preventing water ingression into the crystalline regions of the polymer film. Moreover, the deep highest occupied molecular orbital (HOMO) level and shallow unoccupied molecular orbital (LUMO) level attributed to the contribution of the PQD moiety can prevent air oxidation and nucleophilic attack from water molecules, respectively. We show that the PQD-HD-4T-DD OTFT exhibits excellent electrical stability retaining 78% of its initial charge carrier mobility even after immersing the bottom-gate top-contact OTFT in deionized water for five days without encapsulation.
ISSN: 2050-7526
DOI: 10.1039/d0tc00543f
DOI (Related Dataset): 10.21979/N9/JVHKQQ
Schools: School of Electrical and Electronic Engineering 
Rights: © 2020 The Royal Society of Chemistry. All rights reserved. This paper was published in Journal of Materials Chemistry C and is made available with permission of The Royal Society of Chemistry.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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